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三星 DDR4:如何读/写模式寄存器?

[英]Samsung DDR4: How read/write on mode register?

I have a Samsun DRAM with a K4A8G085WB-BCTD DDR4.我有一个带有 K4A8G085WB-BCTD DDR4 的 Samsun DRAM。 The device operation specification ( here ) says you can work with mode register through the MRS instruction [section 1.4].设备操作规范( 此处)说您可以通过 MRS 指令使用模式寄存器[第 1.4 节]。

I'd like to know if TRR (target row refresh) [section 2.34] is enabled or not.我想知道是否启用了 TRR(目标行刷新)[第 2.34 节]。 It says I can read the MR4 register discovering if it is active or I can write into it to activate it.它说我可以读取 MR4 寄存器以发现它是否处于活动状态,或者我可以写入它以激活它。 However, How can I write/read the mode register practically?但是,如何实际写入/读取模式寄存器? What kind of register is MR4? MR4是一种什么样的寄存器?

As far as I can tell, this is not a command that would be issued from software on the host cpu to the DRAM module, but either by the DDR controller on the motherboard (or integrated with the cpu) to the DRAM module, or by a controller chip on the module to the individual DDR chips.据我所知,这不是从主机 cpu 上的软件向 DRAM 模块发出的命令,而是由主板上的 DDR 控制器(或与 cpu 集成)发送到 DRAM 模块的命令,或者通过模块上的控制器芯片到单个 DDR 芯片。 There might be some way to get Intel's controller to pass commands through, but it's more likely that there's some Intel model-specific register (documented or undocumented, possibly exposed only through BIOS/firmware) to control the feature at a higher level.可能有某种方法可以让 Intel 的控制器通过命令传递命令,但更有可能是有一些特定于 Intel 型号的寄存器(已记录或未记录,可能仅通过 BIOS/固件公开)来控制更高级别的功能。

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